<oai_dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd">
  <dc:creator>Maisi VF</dc:creator>
  <dc:creator>Hofmann A</dc:creator>
  <dc:creator>Röösli M</dc:creator>
  <dc:creator>Basset J</dc:creator>
  <dc:creator>Reichl C</dc:creator>
  <dc:creator>Wegscheider W</dc:creator>
  <dc:creator>Ihn T</dc:creator>
  <dc:creator>Ensslin K</dc:creator>
  <dc:date>2016</dc:date>
  <dc:description xmlns:ns0="xml" ns0:lang="en">We utilize electron counting techniques to distinguish a spin-conserving fast tunneling process and a slower process involving spin flips in AlGaAs/GaAs-based double quantum dots. By studying the dependence of the rates on the interdot tunnel coupling of the two dots, we find that as many as 4% of the tunneling events occur with a spin flip related to spin-orbit coupling in GaAs. Our measurement has a fidelity of 99% in terms of resolving whether a tunneling event occurred with a spin flip or not.</dc:description>
  <dc:format>application/pdf</dc:format>
  <dc:identifier>https://sonar.ch/global/documents/199516</dc:identifier>
  <dc:language>eng</dc:language>
  <dc:relation>info:eu-repo/semantics/altIdentifier/doi/10.1103/PhysRevLett.116.136803</dc:relation>
  <dc:relation>info:eu-repo/semantics/altIdentifier/pmid/27081997</dc:relation>
  <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
  <dc:source>Physical review letters. - 2016</dc:source>
  <dc:title xmlns:ns1="xml" ns1:lang="en">Spin-Orbit Coupling at the Level of a Single Electron.</dc:title>
  <dc:type>http://purl.org/coar/resource_type/c_6501</dc:type>
</oai_dc:dc>