<oai_dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd">
  <dc:creator>Lunghi T</dc:creator>
  <dc:creator>Pomarico E</dc:creator>
  <dc:creator>Barreiro C</dc:creator>
  <dc:creator>Stucki D</dc:creator>
  <dc:creator>Sanguinetti B</dc:creator>
  <dc:creator>Zbinden H</dc:creator>
  <dc:date>2012</dc:date>
  <dc:description xmlns:ns0="xml" ns0:lang="en">We present a gated silicon single-photon detector based on a commercially available avalanche photodiode. Our detector achieves a photon-detection efficiency of 45±5% at 808 nm with 2·10(-6) dark count per nanosecond at 30 V of excess bias and -30°C. We compare gated and free-running detectors and show that this mode of operation has significant advantages in two representative experimental scenarios: detecting a single photon either hidden in faint continuous light or after a strong pulse. We also explore, at different temperatures and incident light intensities, the "charge persistence" effect, whereby a detector clicks some time after having been illuminated.</dc:description>
  <dc:format>application/pdf</dc:format>
  <dc:identifier>https://sonar.ch/global/documents/21147</dc:identifier>
  <dc:language>eng</dc:language>
  <dc:relation>info:eu-repo/semantics/altIdentifier/doi/10.1364/AO.51.008455</dc:relation>
  <dc:relation>info:eu-repo/semantics/altIdentifier/pmid/23262542</dc:relation>
  <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
  <dc:source>Applied optics. - 2012</dc:source>
  <dc:title xmlns:ns1="xml" ns1:lang="en">Advantages of gated silicon single-photon detectors.</dc:title>
  <dc:type>http://purl.org/coar/resource_type/c_6501</dc:type>
</oai_dc:dc>