Linklater DP Haydous F Xi C Pergolesi D Hu J Ivanova EP Juodkazis S Lippert T Juodkazytė J 2020 The fabrication and characterization of photoanodes based on black-Si (b-Si) are presented using a photoelectrochemical cell in NaOH solution. B-Si was fabricated by maskless dry plasma etching and was conformally coated by tens-of-nm of TiO2 using atomic layer deposition (ALD) with a top layer of CoO x cocatalyst deposited by pulsed laser deposition (PLD). Low reflectivity R < 5 % of b-Si over the entire visible and near-IR ( λ < 2 &nbsp; μ m) spectral range was favorable for the better absorption of light, while an increased surface area facilitated larger current densities. The photoelectrochemical performance of the heterostructured b-Si photoanode is discussed in terms of the n-n junction between b-Si and TiO2. application/pdf https://sonar.ch/global/documents/278931 eng info:eu-repo/semantics/altIdentifier/doi/10.3390/nano10050873 info:eu-repo/semantics/altIdentifier/pmid/32369917 info:eu-repo/semantics/openAccess Nanomaterials (Basel, Switzerland). - 2020 antireflection black-Si photoanode water splitting Black-Si as a Photoelectrode. http://purl.org/coar/resource_type/c_6501