Highly focused femtosecond laser directed selective boron doping in single SiC nanowire device for n-p conversion

• Huo, Jinpeng ORCID Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, People's Republic of China
• Zou, Guisheng Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, People's Republic of China
• Lin, Luchan Empa, Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, 8600 Dübendorf, Switzerland
• Wang, Kehong School of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
• Xing, Songling ORCID Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, People's Republic of China
• Zhao, Guanlei Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, People's Republic of China
• Liu, Lei ORCID Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, People's Republic of China
• Norman Zhou, Y. Centre for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada

Physics and Astronomy (miscellaneous)