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Parylene to silicon nitride bonding for post-integration of high pressure microfluidics to CMOS devices.
Journal article

Parylene to silicon nitride bonding for post-integration of high pressure microfluidics to CMOS devices.

  • Ciftlik AT Laboratory of Microsystems 2, École Polytechnique Fédérale de Lausanne, CH-1015, Lausanne, Switzerland. atatuna.ciftlik@epfl.ch
  • Gijs MA
  • 2011-12-03
Published in:
  • Lab on a chip. - 2012
English High pressure-rated channels allow microfluidic assays to be performed on a smaller footprint while keeping the throughput, thanks to the higher enabled flow rates, opening up perspectives for cost-effective integration of CMOS chips to microfluidic circuits. Accordingly, this study introduces an easy, low-cost and efficient method for realizing high pressure microfluidics-to-CMOS integration. First, we report a new low temperature (280 °C) Parylene-C wafer bonding technique, where O(2) plasma-treated Parylene-C bonds directly to Si(3)N(4) with an average bonding strength of 23 MPa. The technique works for silicon wafers with a nitride surface and uses a single layer of Parylene-C deposited only on one wafer, and allows microfluidic structures to be easily formed by directly bonding to the nitride passivation layer of the CMOS devices. Exploiting this technology, we demonstrated a microfluidic chip burst pressure as high as 16 MPa, while metal electrode structures on the silicon wafer remained functional after bonding.
Language
  • English
Open access status
closed
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Persistent URL
https://sonar.ch/global/documents/10009
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