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One-Dimensional Edge Contacts to a Monolayer Semiconductor.

  • Jain A Photonics Laboratory , ETH Zürich , 8093 Zürich , Switzerland.
  • Szabó Á Integrated Systems Laboratory , ETH Zürich , 8092 Zürich , Switzerland.
  • Parzefall M Photonics Laboratory , ETH Zürich , 8093 Zürich , Switzerland.
  • Bonvin E Photonics Laboratory , ETH Zürich , 8093 Zürich , Switzerland.
  • Taniguchi T National Institute for Material Science , 1-1 Namiki , Tsukuba 305-0044 , Japan.
  • Watanabe K National Institute for Material Science , 1-1 Namiki , Tsukuba 305-0044 , Japan.
  • Bharadwaj P Department of Electrical and Computer Engineering , Rice University , Houston , Texas 77005 , United States.
  • Luisier M Integrated Systems Laboratory , ETH Zürich , 8092 Zürich , Switzerland.
  • Novotny L Photonics Laboratory , ETH Zürich , 8093 Zürich , Switzerland.
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  • 2019-09-13
Published in:
  • Nano letters. - 2019
2D materials
TMDCs
edge contacts
encapsulation
heterostructures
English Integration of electrical contacts into van der Waals (vdW) heterostructures is critical for realizing electronic and optoelectronic functionalities. However, to date no scalable methodology for gaining electrical access to buried monolayer two-dimensional (2D) semiconductors exists. Here we report viable edge contact formation to hexagonal boron nitride (hBN) encapsulated monolayer MoS2. By combining reactive ion etching, in situ Ar+ sputtering and annealing, we achieve a relatively low edge contact resistance, high mobility (up to ∼30 cm2 V-1 s-1) and high on-current density (>50 μA/μm at VDS = 3V), comparable to top contacts. Furthermore, the atomically smooth hBN environment also preserves the intrinsic MoS2 channel quality during fabrication, leading to a steep subthreshold swing of 116 mV/dec with a negligible hysteresis. Hence, edge contacts are highly promising for large-scale practical implementation of encapsulated heterostructure devices, especially those involving air sensitive materials, and can be arbitrarily narrow, which opens the door to further shrinkage of 2D device footprint.
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  • English
Open access status
green
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https://sonar.ch/global/documents/104365
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