Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN
- Okumura, Hironori Institute of Physics, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
- Martin, Denis Institute of Physics, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
- Grandjean, Nicolas ORCID Institute of Physics, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
Published in:
- Applied Physics Letters. - AIP Publishing. - 2016, vol. 109, no. 25, p. 252101
- Language
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- English
- Open access status
- green
- Identifiers
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- DOI 10.1063/1.4972408
- ISSN 0003-6951
- Persistent URL
- https://sonar.ch/global/documents/139271
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