Self-Consistent Calculations of the Ground State
and the Capacitance of a 3D Si/SiO2 Quantum Dot
- Scholze, A. Beckman Institute for Advanced Science and Technology, University of Illinois, Urbana 61801, Illinois, USA
- Wettstein, A. Swiss Federal Institute of Technology, Integrated Systems Laboratory, Gloriastrasse 35, Zürich CH-8092, Switzerland
- Schenk, A. Swiss Federal Institute of Technology, Integrated Systems Laboratory, Gloriastrasse 35, Zürich CH-8092, Switzerland
- Fichtner, W. Swiss Federal Institute of Technology, Integrated Systems Laboratory, Gloriastrasse 35, Zürich CH-8092, Switzerland
Published in:
- VLSI Design. - Hindawi Limited. - 1998, vol. 8, no. 1-4, p. 231-235
Hardware and Architecture
Electrical and Electronic Engineering
Computer Graphics and Computer-Aided Design
English
We perform self-consistent electronic structure calculations in the framework of
inhomogeneously and anisotropically scaled local density functional theory of a fully
3D modeled Si/SiO2 quantum dot. Electrons are laterally confined in the semiconductor/
oxide heterojunction by a metallic gate atop of the device. Total charge densities,
total free energies, chemical potentials for different numbers of electrons in the dot, and
the differential capacitances for various dot sizes are calculated. We observe shell filling
effects in the differential capacitance. The magic-numbers are governed by the six valley
bandstructure of silicon, which leads to four fold degenerated single particle levels in the
dot.
inhomogeneously and anisotropically scaled local density functional theory of a fully
3D modeled Si/SiO
oxide heterojunction by a metallic gate atop of the device. Total charge densities,
total free energies, chemical potentials for different numbers of electrons in the dot, and
the differential capacitances for various dot sizes are calculated. We observe shell filling
effects in the differential capacitance. The magic-numbers are governed by the six valley
bandstructure of silicon, which leads to four fold degenerated single particle levels in the
dot.
- Language
-
- English
- Open access status
- gold
- Identifiers
-
- DOI 10.1155/1998/86580
- ISSN 1065-514X
- Persistent URL
- https://sonar.ch/global/documents/140261
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