Graphene nanoribbon heterojunctions.
- Cai J 1] Empa, Swiss Federal Laboratories for Materials Science and Technology, 8600 Dübendorf, Switzerland [2].
- Pignedoli CA Empa, Swiss Federal Laboratories for Materials Science and Technology, 8600 Dübendorf, Switzerland.
- Talirz L Empa, Swiss Federal Laboratories for Materials Science and Technology, 8600 Dübendorf, Switzerland.
- Ruffieux P Empa, Swiss Federal Laboratories for Materials Science and Technology, 8600 Dübendorf, Switzerland.
- Söde H Empa, Swiss Federal Laboratories for Materials Science and Technology, 8600 Dübendorf, Switzerland.
- Liang L Department of Physics, Rensselaer Polytechnic Institute, Troy, New York 12180, USA.
- Meunier V Department of Physics, Rensselaer Polytechnic Institute, Troy, New York 12180, USA.
- Berger R Max Planck Institute for Polymer Research, 55124 Mainz, Germany.
- Li R Max Planck Institute for Polymer Research, 55124 Mainz, Germany.
- Feng X Max Planck Institute for Polymer Research, 55124 Mainz, Germany.
- Müllen K Max Planck Institute for Polymer Research, 55124 Mainz, Germany.
- Fasel R 1] Empa, Swiss Federal Laboratories for Materials Science and Technology, 8600 Dübendorf, Switzerland [2] Department of Chemistry and Biochemistry, University of Bern, Freiestrasse 3, 3012 Bern, Switzerland.
- 2014-09-08
Published in:
- Nature nanotechnology. - 2014
English
Despite graphene's remarkable electronic properties, the lack of an electronic bandgap severely limits its potential for applications in digital electronics. In contrast to extended films, narrow strips of graphene (called graphene nanoribbons) are semiconductors through quantum confinement, with a bandgap that can be tuned as a function of the nanoribbon width and edge structure. Atomically precise graphene nanoribbons can be obtained via a bottom-up approach based on the surface-assisted assembly of molecular precursors. Here we report the fabrication of graphene nanoribbon heterojunctions and heterostructures by combining pristine hydrocarbon precursors with their nitrogen-substituted equivalents. Using scanning probe methods, we show that the resulting heterostructures consist of seamlessly assembled segments of pristine (undoped) graphene nanoribbons (p-GNRs) and deterministically nitrogen-doped graphene nanoribbons (N-GNRs), and behave similarly to traditional p-n junctions. With a band shift of 0.5 eV and an electric field of 2 × 10(8) V m(-1) at the heterojunction, these materials bear a high potential for applications in photovoltaics and electronics.
- Language
-
- English
- Open access status
- green
- Identifiers
-
- DOI 10.1038/nnano.2014.184
- PMID 25194948
- Persistent URL
- https://sonar.ch/global/documents/162902
Statistics
Document views: 59
File downloads:
- Full-text: 0