Sub-picosecond charge-transfer at near-zero driving force in polymer:non-fullerene acceptor blends and bilayers.
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Zhong Y
Department of Chemistry and Biochemistry, University of Bern, Freiestrasse 3, CH-3012, Bern, Switzerland.
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Causa' M
Department of Chemistry and Biochemistry, University of Bern, Freiestrasse 3, CH-3012, Bern, Switzerland.
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Moore GJ
Department of Chemistry and Biochemistry, University of Bern, Freiestrasse 3, CH-3012, Bern, Switzerland.
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Krauspe P
Department of Chemistry and Biochemistry, University of Bern, Freiestrasse 3, CH-3012, Bern, Switzerland.
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Xiao B
Chinese Academy of Sciences (CAS) Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
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Günther F
Instituto de Física de São Carlos (IFSC), Universidade de São Paulo (USP), Av. Trabalhador saocarlense, 400, CEP, 13560-970, São Carlos, Brazil.
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Kublitski J
Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics Technische Universität Dresden, Nöthnitzer Str. 61, 01187, Dresden, Germany.
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Shivhare R
Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics Technische Universität Dresden, Nöthnitzer Str. 61, 01187, Dresden, Germany.
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Benduhn J
Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics Technische Universität Dresden, Nöthnitzer Str. 61, 01187, Dresden, Germany.
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BarOr E
Institute of Physics and Astronomy, University of Potsdam, Karl-Liebknecht-Str. 24-25, 14476, Potsdam-Golm, Germany.
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Mukherjee S
Material Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD, 20899, USA.
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Yallum KM
Department of Chemistry and Biochemistry, University of Bern, Freiestrasse 3, CH-3012, Bern, Switzerland.
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Réhault J
Department of Chemistry and Biochemistry, University of Bern, Freiestrasse 3, CH-3012, Bern, Switzerland.
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Mannsfeld SCB
Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics Technische Universität Dresden, Nöthnitzer Str. 61, 01187, Dresden, Germany.
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Neher D
Institute of Physics and Astronomy, University of Potsdam, Karl-Liebknecht-Str. 24-25, 14476, Potsdam-Golm, Germany.
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Richter LJ
Material Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD, 20899, USA.
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DeLongchamp DM
Material Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD, 20899, USA.
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Ortmann F
Center for Advancing Electronics Dresden, Technische Universität Dresden, Helmholtzstr. 18, 01062, Dresden, Germany.
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Vandewal K
Institute for Materials Research (IMO-IMOMEC), Hasselt University, Wetenschapspark 1, 3590, Diepenbeek, Belgium.
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Zhou E
Chinese Academy of Sciences (CAS) Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China. zhouej@nanoctr.cn.
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Banerji N
Department of Chemistry and Biochemistry, University of Bern, Freiestrasse 3, CH-3012, Bern, Switzerland. natalie.banerji@dcb.unibe.ch.
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Published in:
- Nature communications. - 2020
English
Organic photovoltaics based on non-fullerene acceptors (NFAs) show record efficiency of 16 to 17% and increased photovoltage owing to the low driving force for interfacial charge-transfer. However, the low driving force potentially slows down charge generation, leading to a tradeoff between voltage and current. Here, we disentangle the intrinsic charge-transfer rates from morphology-dependent exciton diffusion for a series of polymer:NFA systems. Moreover, we establish the influence of the interfacial energetics on the electron and hole transfer rates separately. We demonstrate that charge-transfer timescales remain at a few hundred femtoseconds even at near-zero driving force, which is consistent with the rates predicted by Marcus theory in the normal region, at moderate electronic coupling and at low re-organization energy. Thus, in the design of highly efficient devices, the energy offset at the donor:acceptor interface can be minimized without jeopardizing the charge-transfer rate and without concerns about a current-voltage tradeoff.
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Language
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Open access status
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gold
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https://sonar.ch/global/documents/185127
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