Journal article
Conductivity control via minimally invasive anti-Frenkel defects in a functional oxide.
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Evans DM
Department of Materials Science and Engineering, Norwegian University of Science and Technology (NTNU), Trondheim, Norway. donald.evans@ntnu.no.
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Holstad TS
Department of Materials Science and Engineering, Norwegian University of Science and Technology (NTNU), Trondheim, Norway.
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Mosberg AB
Department of Physics, Norwegian University of Science and Technology (NTNU), Trondheim, Norway.
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Småbråten DR
Department of Materials Science and Engineering, Norwegian University of Science and Technology (NTNU), Trondheim, Norway.
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Vullum PE
SINTEF Industry, Trondheim, Norway.
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Dadlani AL
Department of Mechanical and Industrial Engineering, Norwegian University of Science and Technology (NTNU), Trondheim, Norway.
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Shapovalov K
Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra, Spain.
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Yan Z
Department of Physics, ETH Zurich, Zürich, Switzerland.
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Bourret E
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
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Gao D
Department of Physics, Norwegian University of Science and Technology (NTNU), Trondheim, Norway.
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Akola J
Department of Physics, Norwegian University of Science and Technology (NTNU), Trondheim, Norway.
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Torgersen J
Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra, Spain.
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van Helvoort ATJ
Department of Physics, Norwegian University of Science and Technology (NTNU), Trondheim, Norway.
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Selbach SM
Department of Materials Science and Engineering, Norwegian University of Science and Technology (NTNU), Trondheim, Norway.
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Meier D
Department of Materials Science and Engineering, Norwegian University of Science and Technology (NTNU), Trondheim, Norway. dennis.meier@ntnu.no.
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English
Utilizing quantum effects in complex oxides, such as magnetism, multiferroicity and superconductivity, requires atomic-level control of the material's structure and composition. In contrast, the continuous conductivity changes that enable artificial oxide-based synapses and multiconfigurational devices are driven by redox reactions and domain reconfigurations, which entail long-range ionic migration and changes in stoichiometry or structure. Although both concepts hold great technological potential, combined applications seem difficult due to the mutually exclusive requirements. Here we demonstrate a route to overcome this limitation by controlling the conductivity in the functional oxide hexagonal Er(Mn,Ti)O3 by using conductive atomic force microscopy to generate electric-field induced anti-Frenkel defects, that is, charge-neutral interstitial-vacancy pairs. These defects are generated with nanoscale spatial precision to locally enhance the electronic hopping conductivity by orders of magnitude without disturbing the ferroelectric order. We explain the non-volatile effects using density functional theory and discuss its universality, suggesting an alternative dimension to functional oxides and the development of multifunctional devices for next-generation nanotechnology.
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Language
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Open access status
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closed
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Persistent URL
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https://sonar.ch/global/documents/185256
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