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High-speed III-V nanowire photodetector monolithically integrated on Si.

  • Mauthe S IBM Research Europe, Säumerstr. 4, 8803, Rüschlikon, Switzerland.
  • Baumgartner Y IBM Research Europe, Säumerstr. 4, 8803, Rüschlikon, Switzerland.
  • Sousa M IBM Research Europe, Säumerstr. 4, 8803, Rüschlikon, Switzerland.
  • Ding Q Department of Information Technology and Electrical Engineering, Integrated Systems Laboratory, ETH Zurich, Gloriastr. 35, 8092, Zurich, Switzerland.
  • Rossell MD IBM Research Europe, Säumerstr. 4, 8803, Rüschlikon, Switzerland.
  • Schenk A Department of Information Technology and Electrical Engineering, Integrated Systems Laboratory, ETH Zurich, Gloriastr. 35, 8092, Zurich, Switzerland.
  • Czornomaz L IBM Research Europe, Säumerstr. 4, 8803, Rüschlikon, Switzerland.
  • Moselund KE IBM Research Europe, Säumerstr. 4, 8803, Rüschlikon, Switzerland. kmo@zurich.ibm.com.
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  • 2020-09-12
Published in:
  • Nature communications. - 2020
General Biochemistry, Genetics and Molecular Biology
General Physics and Astronomy
General Chemistry
English Direct epitaxial growth of III-Vs on silicon for optical emitters and detectors is an elusive goal. Nanowires enable the local integration of high-quality III-V material, but advanced devices are hampered by their high-aspect ratio vertical geometry. Here, we demonstrate the in-plane monolithic integration of an InGaAs nanostructure p-i-n photodetector on Si. Using free space coupling, photodetectors demonstrate a spectral response from 1200-1700 nm. The 60 nm thin devices, with footprints as low as ~0.06 μm2, provide an ultra-low capacitance which is key for high-speed operation. We demonstrate high-speed optical data reception with a nanostructure photodetector at 32 Gb s-1, enabled by a 3 dB bandwidth exceeding ~25 GHz. When operated as light emitting diode, the p-i-n devices emit around 1600 nm, paving the way for future fully integrated optical links.
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  • English
Open access status
gold
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https://sonar.ch/global/documents/186126
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