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Forward and Backward Switching of Nonlinear Unidirectional Emission from GaAs Nanoantennas.
Journal article

Forward and Backward Switching of Nonlinear Unidirectional Emission from GaAs Nanoantennas.

  • Xu L School of Engineering and Information Technology , University of New South Wales , Canberra , ACT 2600 , Australia.
  • Saerens G Optical Nanomaterial Group, Institute for Quantum Electronics, Department of Physics , ETH Zurich , 8093 Zurich , Switzerland.
  • Timofeeva M Optical Nanomaterial Group, Institute for Quantum Electronics, Department of Physics , ETH Zurich , 8093 Zurich , Switzerland.
  • Smirnova DA Nonlinear Physics Centre, Research School of Physics , The Australian National University , Canberra , ACT 2601 , Australia.
  • Volkovskaya I Institute of Applied Physics , Russian Academy of Sciences , Nizhny Novgorod 603950 , Russia.
  • Lysevych M Department of Electronic Materials Engineering, Research School of Physics , The Australian National University , Canberra , ACT 2601 , Australia.
  • Camacho-Morales R Nonlinear Physics Centre, Research School of Physics , The Australian National University , Canberra , ACT 2601 , Australia.
  • Cai M Nonlinear Physics Centre, Research School of Physics , The Australian National University , Canberra , ACT 2601 , Australia.
  • Zangeneh Kamali K Nonlinear Physics Centre, Research School of Physics , The Australian National University , Canberra , ACT 2601 , Australia.
  • Huang L School of Engineering and Information Technology , University of New South Wales , Canberra , ACT 2600 , Australia.
  • Karouta F Department of Electronic Materials Engineering, Research School of Physics , The Australian National University , Canberra , ACT 2601 , Australia.
  • Tan HH Department of Electronic Materials Engineering, Research School of Physics , The Australian National University , Canberra , ACT 2601 , Australia.
  • Jagadish C Department of Electronic Materials Engineering, Research School of Physics , The Australian National University , Canberra , ACT 2601 , Australia.
  • Miroshnichenko AE School of Engineering and Information Technology , University of New South Wales , Canberra , ACT 2600 , Australia.
  • Grange R Optical Nanomaterial Group, Institute for Quantum Electronics, Department of Physics , ETH Zurich , 8093 Zurich , Switzerland.
  • Neshev DN Nonlinear Physics Centre, Research School of Physics , The Australian National University , Canberra , ACT 2601 , Australia.
  • Rahmani M Nonlinear Physics Centre, Research School of Physics , The Australian National University , Canberra , ACT 2601 , Australia.
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  • 2019-12-27
Published in:
  • ACS nano. - 2020
III−V semiconductors
Mie resonance
high-index nanoantennas
nonlinear tensor
second harmonic generation
unidirectional emission
English High-index III-V semiconductor nanoantennas have gained great attention for enhanced nonlinear light-matter interactions, in the past few years. However, the complexity of nonlinear emission profiles imposes severe constraints on practical applications, such as in optical communications and integrated optoelectronic devices. These complexities include the lack of unidirectional nonlinear emission and the severe challenges in switching between forward and backward emissions, due to the structure of the susceptibility tensor of the III-V nanoantennas. Here, we propose a solution to both issues via engineering the nonlinear tensor of the nanoantennas. The special nonlinear tensorial properties of zinc-blende material can be used to engineer the nonlinear characteristics via growing the nanoantennas along different crystalline orientations. Based on the nonlinear multipolar effect, we have designed and fabricated (110)-grown GaAs nanoantennas, with engineered tensorial properties, embedded in a transparent low-index material. Our technique provides an approach not only for unidirectional second-harmonic generation (SHG) forward or backward emission but also for switching from one to another. Importantly, switching the SHG emission directionality is obtained only by rotating the polarization of the incident light, without the need for physical variation of the antennas or the environment. This characteristic is an advantage, as compared to other nonlinear nanoantennas, including (100)- and (111)-grown III-V counterparts or silicon and germanium nanoantennas. Indeed, (110)-GaAs nanoantennas allow for engineering the nonlinear nanophotonic systems including nonlinear "Huygens metasurfaces" and offer exciting opportunities for various nonlinear nanophotonics technologies, such as nanoscale light routing and light sources, as well as multifunctional flat optical elements.
Language
  • English
Open access status
closed
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Persistent URL
https://sonar.ch/global/documents/213566
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