3D-nanostructured boron-doped diamond for microelectrode array neural interfacing.
Journal article

3D-nanostructured boron-doped diamond for microelectrode array neural interfacing.

  • Piret G INSERM, UA01, Clinatec Laboratory, Biomedical Research Center Edmond J. Safra, F-38 000 Grenoble, France; Université Grenoble Alpes, UA01, Clinatec Laboratory, Biomedical Research Center Edmond J. Safra, F-38 000 Grenoble, France; CEA, LETI, Clinatec, F-38000 Grenoble, France. Electronic address: gaelle.offranc-piret@inserm.fr.
  • Hébert C CEA, LIST, Diamond Sensors Laboratory, 91191 Gif-sur-Yvette, France. Electronic address: clement.hebert@cea.fr.
  • Mazellier JP Thales Research & Technology, Palaiseau, 91767 Cedex, France.
  • Rousseau L ESIEE-Paris, ESYCOM, University Paris EST, Cité Descartes BP99, Noisy-Le-Grand F-93160, France.
  • Scorsone E CEA, LIST, Diamond Sensors Laboratory, 91191 Gif-sur-Yvette, France.
  • Cottance M ESIEE-Paris, ESYCOM, University Paris EST, Cité Descartes BP99, Noisy-Le-Grand F-93160, France.
  • Lissorgues G ESIEE-Paris, ESYCOM, University Paris EST, Cité Descartes BP99, Noisy-Le-Grand F-93160, France.
  • Heuschkel MO Qwane Biosciences SA, EPFL Innovation Park, CH-1015 Lausanne, Switzerland.
  • Picaud S INSERM, U968, Institut de la Vision, Paris F-75012, France; Sorbonne Universités, UPMC Univ Paris 06, UMR_S968, Institut de la Vision, Paris F-75012, France; CNRS UMR7210, Institut de la Vision, Paris 75012, France.
  • Bergonzo P CEA, LIST, Diamond Sensors Laboratory, 91191 Gif-sur-Yvette, France.
  • Yvert B INSERM, UA01, Clinatec Laboratory, Biomedical Research Center Edmond J. Safra, F-38 000 Grenoble, France; Université Grenoble Alpes, UA01, Clinatec Laboratory, Biomedical Research Center Edmond J. Safra, F-38 000 Grenoble, France; CEA, LETI, Clinatec, F-38000 Grenoble, France. Electronic address: blaise.yvert@inserm.fr.
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  • 2015-04-20
Published in:
  • Biomaterials. - 2015
English The electrode material is a key element in the design of long-term neural implants and neuroprostheses. To date, the ideal electrode material offering high longevity, biocompatibility, low-noise recording and high stimulation capabilities remains to be found. We show that 3D-nanostructured boron doped diamond (BDD), an innovative material consisting in a chemically stable material with a high aspect ratio structure obtained by encapsulation of a carbon nanotube template within two BDD nanolayers, allows neural cell attachment, survival and neurite extension. Further, we developed arrays of 20-μm-diameter 3D-nanostructured BDD microelectrodes for neural interfacing. These microelectrodes exhibited low impedances and low intrinsic recording noise levels. In particular, they allowed the detection of low amplitude (10-20 μV) local-field potentials, single units and multiunit bursts neural activity in both acute whole embryonic hindbrain-spinal cord preparations and long-term hippocampal cell cultures. Also, cyclic voltammetry measurements showed a wide potential window of about 3 V and a charge storage capacity of 10 mC.cm(-2), showing high potentiality of this material for neural stimulation. These results demonstrate the attractiveness of 3D-nanostructured BDD as a novel material for neural interfacing, with potential applications for the design of biocompatible neural implants for the exploration and rehabilitation of the nervous system.
Language
  • English
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hybrid
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https://sonar.ch/global/documents/22286
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