Journal article
High-Performance ZnO Nanowire Transistors with Aluminum Top-Gate Electrodes and Naturally Formed Hybrid Self-Assembled Monolayer/AlOx Gate Dielectric
- Kälblein, Daniel Max Planck Institute for Solid State Research, 70569 Stuttgart, Germany
- Ryu, Hyeyeon Max Planck Institute for Solid State Research, 70569 Stuttgart, Germany
- Ante, Frederik Max Planck Institute for Solid State Research, 70569 Stuttgart, Germany
- Fenk, Bernhard Max Planck Institute for Solid State Research, 70569 Stuttgart, Germany
- Hahn, Kersten Max Planck Institute for Intelligent Systems, 70569 Stuttgart, Germany
- Kern, Klaus Institut de Physique de la Matière Condensée, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
- Klauk, Hagen Max Planck Institute for Solid State Research, 70569 Stuttgart, Germany
- 2014-6-27
Published in:
- ACS Nano. - American Chemical Society (ACS). - 2014, vol. 8, no. 7, p. 6840-6848
- Language
-
- English
- Open access status
- closed
- Identifiers
-
- DOI 10.1021/nn501484e
- ISSN 1936-0851
- Persistent URL
- https://sonar.ch/global/documents/231443
Statistics
Document views: 11
File downloads: