Journal article
Few-Layer WSe2 Schottky Junction-Based Photovoltaic Devices through Site-Selective Dual Doping
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Ko, Seungpil
School
of Electrical Engineering, Korea University, 136-701 Seoul, Republic of Korea
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Na, Junhong
ORCID
Max-Planck-Institute for Solid State Research, Heisenbergstrasse 1, D-70569 Stuttgart, Germany
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Moon, Young-Sun
School
of Electrical Engineering, Korea University, 136-701 Seoul, Republic of Korea
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Zschieschang, Ute
Max-Planck-Institute for Solid State Research, Heisenbergstrasse 1, D-70569 Stuttgart, Germany
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Acharya, Rachana
Max-Planck-Institute for Solid State Research, Heisenbergstrasse 1, D-70569 Stuttgart, Germany
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Klauk, Hagen
Max-Planck-Institute for Solid State Research, Heisenbergstrasse 1, D-70569 Stuttgart, Germany
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Kim, Gyu-Tae
School
of Electrical Engineering, Korea University, 136-701 Seoul, Republic of Korea
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Burghard, Marko
Max-Planck-Institute for Solid State Research, Heisenbergstrasse 1, D-70569 Stuttgart, Germany
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Kern, Klaus
Institut
de Physique, École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
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Published in:
- ACS Applied Materials & Interfaces. - American Chemical Society (ACS). - 2017, vol. 9, no. 49, p. 42912-42918
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Language
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Open access status
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closed
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Identifiers
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Persistent URL
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https://sonar.ch/global/documents/231628
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