Few-Layer WSe2 Schottky Junction-Based Photovoltaic Devices through Site-Selective Dual Doping
Journal article

Few-Layer WSe2 Schottky Junction-Based Photovoltaic Devices through Site-Selective Dual Doping

  • Ko, Seungpil School of Electrical Engineering, Korea University, 136-701 Seoul, Republic of Korea
  • Na, Junhong ORCID Max-Planck-Institute for Solid State Research, Heisenbergstrasse 1, D-70569 Stuttgart, Germany
  • Moon, Young-Sun School of Electrical Engineering, Korea University, 136-701 Seoul, Republic of Korea
  • Zschieschang, Ute Max-Planck-Institute for Solid State Research, Heisenbergstrasse 1, D-70569 Stuttgart, Germany
  • Acharya, Rachana Max-Planck-Institute for Solid State Research, Heisenbergstrasse 1, D-70569 Stuttgart, Germany
  • Klauk, Hagen Max-Planck-Institute for Solid State Research, Heisenbergstrasse 1, D-70569 Stuttgart, Germany
  • Kim, Gyu-Tae School of Electrical Engineering, Korea University, 136-701 Seoul, Republic of Korea
  • Burghard, Marko Max-Planck-Institute for Solid State Research, Heisenbergstrasse 1, D-70569 Stuttgart, Germany
  • Kern, Klaus Institut de Physique, École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
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  • 2017-12-4
Published in:
  • ACS Applied Materials & Interfaces. - American Chemical Society (ACS). - 2017, vol. 9, no. 49, p. 42912-42918
Language
  • English
Open access status
closed
Identifiers
Persistent URL
https://sonar.ch/global/documents/231628
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