GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells
- Haller, C. Institute of Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
- Carlin, J.-F. Institute of Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
- Jacopin, G. ORCID Institute of Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
- Liu, W. ORCID Institute of Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
- Martin, D. Institute of Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
- Butté, R. ORCID Institute of Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
- Grandjean, N. ORCID Institute of Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
Published in:
- Applied Physics Letters. - AIP Publishing. - 2018, vol. 113, no. 11, p. 111106
- Language
-
- English
- Open access status
- hybrid
- Identifiers
-
- DOI 10.1063/1.5048010
- ISSN 0003-6951
- Persistent URL
- https://sonar.ch/global/documents/25684
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