Influence of surface defect density on the ultrafast hot carrier relaxation and transport in [Formula: see text] photoelectrodes.
- Grad L Department of Physics, University of Zurich, Winterthurerstrasse 190, 8057, Zurich, Switzerland.
- Novotny Z Department of Physics, University of Zurich, Winterthurerstrasse 190, 8057, Zurich, Switzerland.
- Hengsberger M Department of Physics, University of Zurich, Winterthurerstrasse 190, 8057, Zurich, Switzerland.
- Osterwalder J Department of Physics, University of Zurich, Winterthurerstrasse 190, 8057, Zurich, Switzerland. osterwal@physik.uzh.ch.
- 2020-07-02
Published in:
- Scientific reports. - 2020
English
Cuprous oxide ([Formula: see text]) is a promising material for photoelectrochemical energy conversion due to its small direct band gap, high absorbance, and its Earth-abundant constituents. High conversion efficiencies require transport of photoexcited charges to the interface without energy loss. We studied the electron dynamics in [Formula: see text](111) by time-resolved two-photon photoemission for different surface defect densities in order to elucidate the influence on charge carrier transport. On the pristine bulk terminated surface, the principal conduction bands could be resolved, and ultrafast, elastic transport of electrons to the surface was observed. On a reconstructed surface the carrier transport is strongly suppressed and defect states dominate the spectra. Evidence for surface oxygen vacancies acting as efficient carrier traps is provided, what is important for further engineering of [Formula: see text] based photoelectrodes.
- Language
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- English
- Open access status
- gold
- Identifiers
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- DOI 10.1038/s41598-020-67589-z
- PMID 32606451
- Persistent URL
- https://sonar.ch/global/documents/3827
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