Back
Polar Second-Harmonic Imaging to Resolve Pure and Mixed Crystal Phases along GaAs Nanowires.
Journal article

Polar Second-Harmonic Imaging to Resolve Pure and Mixed Crystal Phases along GaAs Nanowires.

  • Timofeeva M Optical Nanomaterial Group, Institute for Quantum Electronics, Department of Physics, ETH Zurich , Auguste-Piccard Hof 1, 8093 Zurich, Switzerland.
  • Bouravleuv A St. Petersburg Academic University , Khlopina 8/3, 194021 Saint Petersburg, Russia.
  • Cirlin G St. Petersburg Academic University , Khlopina 8/3, 194021 Saint Petersburg, Russia.
  • Shtrom I St. Petersburg Academic University , Khlopina 8/3, 194021 Saint Petersburg, Russia.
  • Soshnikov I St. Petersburg Academic University , Khlopina 8/3, 194021 Saint Petersburg, Russia.
  • Reig Escalé M Optical Nanomaterial Group, Institute for Quantum Electronics, Department of Physics, ETH Zurich , Auguste-Piccard Hof 1, 8093 Zurich, Switzerland.
  • Sergeyev A Optical Nanomaterial Group, Institute for Quantum Electronics, Department of Physics, ETH Zurich , Auguste-Piccard Hof 1, 8093 Zurich, Switzerland.
  • Grange R Optical Nanomaterial Group, Institute for Quantum Electronics, Department of Physics, ETH Zurich , Auguste-Piccard Hof 1, 8093 Zurich, Switzerland.
Show more…
  • 2016-09-23
Published in:
  • Nano letters. - 2016
GaAs
Nanowires
crystal phase
far-field microscopy
high-resolution transmission electron microscopy
polar second-harmonic imaging
polarization-dependent
scanning electron microscopy
second-harmonic generation
twins
wurtzite
zinc blende
English In this work, we report an optical method for characterizing crystal phases along single-semiconductor III-V nanowires based on the measurement of polarization-dependent second-harmonic generation. This powerful imaging method is based on a per-pixel analysis of the second-harmonic-generated signal on the incoming excitation polarization. The dependence of the second-harmonic generation responses on the nonlinear second-order susceptibility tensor allows the distinguishing of areas of pure wurtzite, zinc blende, and mixed and rotational twins crystal structures in individual nanowires. With a far-field nonlinear optical microscope, we recorded the second-harmonic generation in GaAs nanowires and precisely determined their various crystal structures by analyzing the polar response for each pixel of the images. The predicted crystal phases in GaAs nanowire are confirmed with scanning transmission electron and high-resolution transmission electron measurements. The developed method of analyzing the nonlinear polar response of each pixel can be used for an investigation of nanowire crystal structure that is quick, sensitive to structural transitions, nondestructive, and on-the-spot. It can be applied for the crystal phase characterization of nanowires built into optoelectronic devices in which electron microscopy cannot be performed (for example, in lab-on-a-chip devices). Moreover, this method is not limited to GaAs nanowires but can be used for other nonlinear optical nanostructures.
Language
  • English
Open access status
closed
Identifiers
Persistent URL
https://sonar.ch/global/documents/65708
Statistics
Document views: 5 File downloads: