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High-Power Growth-Robust InGaAs/InAlAs Terahertz Quantum Cascade Lasers.

  • Deutsch C Photonics Institute, TU Wien, Gußhausstraße 27-29, 1040 Vienna, Austria.
  • Kainz MA Photonics Institute, TU Wien, Gußhausstraße 27-29, 1040 Vienna, Austria.
  • Krall M Photonics Institute, TU Wien, Gußhausstraße 27-29, 1040 Vienna, Austria.
  • Brandstetter M Photonics Institute, TU Wien, Gußhausstraße 27-29, 1040 Vienna, Austria.
  • Bachmann D Photonics Institute, TU Wien, Gußhausstraße 27-29, 1040 Vienna, Austria.
  • Schönhuber S Photonics Institute, TU Wien, Gußhausstraße 27-29, 1040 Vienna, Austria.
  • Detz H Institute of Solid State Electronics and Center for Micro- and Nanostructures, TU Wien, Floragasse 7, 1040 Vienna, Austria.
  • Zederbauer T Institute of Solid State Electronics and Center for Micro- and Nanostructures, TU Wien, Floragasse 7, 1040 Vienna, Austria.
  • MacFarland D Institute of Solid State Electronics and Center for Micro- and Nanostructures, TU Wien, Floragasse 7, 1040 Vienna, Austria.
  • Andrews AM Institute of Solid State Electronics and Center for Micro- and Nanostructures, TU Wien, Floragasse 7, 1040 Vienna, Austria.
  • Schrenk W Institute of Solid State Electronics and Center for Micro- and Nanostructures, TU Wien, Floragasse 7, 1040 Vienna, Austria.
  • Beck M Institute for Quantum Electronics, ETH Zurich, Auguste-Piccard-Hof 1, 8093 Zurich, Switzerland.
  • Ohtani K Institute for Quantum Electronics, ETH Zurich, Auguste-Piccard-Hof 1, 8093 Zurich, Switzerland.
  • Faist J Institute for Quantum Electronics, ETH Zurich, Auguste-Piccard-Hof 1, 8093 Zurich, Switzerland.
  • Strasser G Institute of Solid State Electronics and Center for Micro- and Nanostructures, TU Wien, Floragasse 7, 1040 Vienna, Austria.
  • Unterrainer K Photonics Institute, TU Wien, Gußhausstraße 27-29, 1040 Vienna, Austria.
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  • 2017-05-05
Published in:
  • ACS photonics. - 2017
low effective mass
molecular beam epitaxy
nanostructures
quantized transitions
quantum cascade lasers
terahertz
English We report on high-power terahertz quantum cascade lasers based on low effective electron mass InGaAs/InAlAs semiconductor heterostructures with excellent reproducibility. Growth-related asymmetries in the form of interface roughness and dopant migration play a crucial role in this material system. These bias polarity dependent phenomena are studied using a nominally symmetric active region resulting in a preferential electron transport in the growth direction. A structure based on a three-well optical phonon depletion scheme was optimized for this bias direction. Depending on the sheet doping density, the performance of this structure shows a trade-off between high maximum operating temperature and high output power. While the highest operating temperature of 155 K is observed for a moderate sheet doping density of 2 × 1010 cm-2, the highest peak output power of 151 mW is found for 7.3 × 1010 cm-2. Furthermore, by abutting a hyperhemispherical GaAs lens to a device with the highest doping level a record output power of 587 mW is achieved for double-metal waveguide structures.
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  • English
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hybrid
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https://sonar.ch/global/documents/66735
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