Journal article
Analog Control of Retainable Resistance Multistates in HfO2 Resistive-Switching Random Access Memories (ReRAMs)
- Giovinazzo, Cecilia Department of Applied Science and Technology (DISAT), Politecnico di Torino, Turin 10129, Italy
- Sandrini, Jury Microelectronic Systems Laboratory (LSM), Swiss Federal Institute of Technology (EPFL), Lausanne 1015, Switzerland
- Shahrabi, Elmira ORCID Microelectronic Systems Laboratory (LSM), Swiss Federal Institute of Technology (EPFL), Lausanne 1015, Switzerland
- Celik, Oguz Tolga Microelectronic Systems Laboratory (LSM), Swiss Federal Institute of Technology (EPFL), Lausanne 1015, Switzerland
- Leblebici, Yusuf Microelectronic Systems Laboratory (LSM), Swiss Federal Institute of Technology (EPFL), Lausanne 1015, Switzerland
- Ricciardi, Carlo ORCID Department of Applied Science and Technology (DISAT), Politecnico di Torino, Turin 10129, Italy
- 2019-5-9
Published in:
- ACS Applied Electronic Materials. - American Chemical Society (ACS). - 2019, vol. 1, no. 6, p. 900-909
- Language
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- English
- Open access status
- closed
- Identifiers
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- DOI 10.1021/acsaelm.9b00094
- ISSN 2637-6113
- Persistent URL
- https://sonar.ch/global/documents/72524
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