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Fabrication of high-resolution large-area patterns using EUV interference lithography in a scan-exposure mode.
Journal article

Fabrication of high-resolution large-area patterns using EUV interference lithography in a scan-exposure mode.

  • Wang L Laboratory for Micro- and Nanotechnology, Paul Scherrer Institute, CH-5232 Villigen PSI, Switzerland. li.wang@psi.ch
  • Solak HH
  • Ekinci Y
  • 2012-07-12
Published in:
  • Nanotechnology. - 2012
English Limited beam spot size is a major limitation of interference lithography. This limits the area of patterning and reduces the pattern homogeneity. We describe a scanning exposure technique to circumvent this problem. We show the generation of uniform and seamless gratings with half-pitches down to 35 nm over an area of several mm(2) using EUV interference lithography. The presented technique offers a fast and cost-effective method of fabricating one- and two-dimensional periodic nanostructures with improved uniformity and increased patterning area.
Language
  • English
Open access status
closed
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Persistent URL
https://sonar.ch/global/documents/746
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