Quasi-Heteroface Perovskite Solar Cells.
Journal article

Quasi-Heteroface Perovskite Solar Cells.

  • Ren N Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350, P. R. China.
  • Chen B Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350, P. R. China.
  • Shi B Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350, P. R. China.
  • Wang P Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350, P. R. China.
  • Xu Q Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350, P. R. China.
  • Li Y Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350, P. R. China.
  • Li R Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350, P. R. China.
  • Cui X Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350, P. R. China.
  • Hou F Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350, P. R. China.
  • Li T School of Physical Science and Technology, Inner Mongolia University, Key Laboratory of Semiconductor, Inner Mongolia University, Hohhot, 010021, P. R. China.
  • Huang Q Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350, P. R. China.
  • Li Y Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350, P. R. China.
  • Ding Y Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350, P. R. China.
  • Hou G Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350, P. R. China.
  • Chen X Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350, P. R. China.
  • Zhu C School of Physical Science and Technology, Inner Mongolia University, Key Laboratory of Semiconductor, Inner Mongolia University, Hohhot, 010021, P. R. China.
  • Zhao Y Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350, P. R. China.
  • Hagfeldt A Laboratory of Photomolecular Science, Institute of Chemical Sciences Engineering, Ecole Polytechnique Fedérale de Lausanne (EPFL), Lausanne, 1015, Switzerland.
  • Zhang X Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350, P. R. China.
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  • 2020-07-23
Published in:
  • Small (Weinheim an der Bergstrasse, Germany). - 2020
English Perovskite solar cells (PSCs) have attracted unprecedented attention due to their rapidly rising photoelectric conversion efficiency (PCE). In order to further improve the PCE of PSCs, new possible optimization path needs to be found. Here, quasi-heteroface PSCs (QHF-PSCs) is designed by a double-layer perovskite film. Such brand new PSCs have good carrier separation capabilities, effectively suppress the nonradiative recombination of the PSCs, and thus greatly improve the open-circuit voltage and PCE. The root cause of the performance improvement is the benefit from the additional built-in electric field, which is confirmed by measuring the external quantum efficiency under applied electric field and Kelvin probe force microscope. Meanwhile, an intermediate band gap perovskite layer can be obtained simply by combining a wide band gap perovskite layer with a narrow band gap perovskite layer. Tunability of the band gap is obtained by varying the film thicknesses of the narrow and wide band gap layers. This phenomenon is quite different from traditional inorganic solar cells, whose band gap is determined only by the narrowest band gap layer. It is believed that these QHF-PSCs will be an effective strategy to further enhance PCE in PSCs and provide basis to further understand and develop the perovskite materials platform.
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  • English
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https://sonar.ch/global/documents/80196
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