Ren NInstitute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350, P. R. China.
Chen BInstitute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350, P. R. China.
Shi BInstitute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350, P. R. China.
Wang PInstitute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350, P. R. China.
Xu QInstitute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350, P. R. China.
Li YInstitute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350, P. R. China.
Li RInstitute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350, P. R. China.
Cui XInstitute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350, P. R. China.
Hou FInstitute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350, P. R. China.
Li TSchool of Physical Science and Technology, Inner Mongolia University, Key Laboratory of Semiconductor, Inner Mongolia University, Hohhot, 010021, P. R. China.
Huang QInstitute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350, P. R. China.
Li YInstitute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350, P. R. China.
Ding YInstitute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350, P. R. China.
Hou GInstitute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350, P. R. China.
Chen XInstitute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350, P. R. China.
Zhu CSchool of Physical Science and Technology, Inner Mongolia University, Key Laboratory of Semiconductor, Inner Mongolia University, Hohhot, 010021, P. R. China.
Zhao YInstitute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350, P. R. China.
Hagfeldt ALaboratory of Photomolecular Science, Institute of Chemical Sciences Engineering, Ecole Polytechnique Fedérale de Lausanne (EPFL), Lausanne, 1015, Switzerland.
Zhang XInstitute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350, P. R. China.
English
Perovskite solar cells (PSCs) have attracted unprecedented attention due to their rapidly rising photoelectric conversion efficiency (PCE). In order to further improve the PCE of PSCs, new possible optimization path needs to be found. Here, quasi-heteroface PSCs (QHF-PSCs) is designed by a double-layer perovskite film. Such brand new PSCs have good carrier separation capabilities, effectively suppress the nonradiative recombination of the PSCs, and thus greatly improve the open-circuit voltage and PCE. The root cause of the performance improvement is the benefit from the additional built-in electric field, which is confirmed by measuring the external quantum efficiency under applied electric field and Kelvin probe force microscope. Meanwhile, an intermediate band gap perovskite layer can be obtained simply by combining a wide band gap perovskite layer with a narrow band gap perovskite layer. Tunability of the band gap is obtained by varying the film thicknesses of the narrow and wide band gap layers. This phenomenon is quite different from traditional inorganic solar cells, whose band gap is determined only by the narrowest band gap layer. It is believed that these QHF-PSCs will be an effective strategy to further enhance PCE in PSCs and provide basis to further understand and develop the perovskite materials platform.