Marichal CMaterials Science and Simulation, NUM/ASQ, Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland and Neutrons and X-rays for Mechanics of Materials, IMX, École Polytechnique Fédérale de Lausanne, CH-1012 Lausanne, Switzerland.
Srivastava KInstitute for Applied Materials IAM, Karlsruhe Institute of Technology, 76131 Karlsruhe, Germany.
Weygand DInstitute for Applied Materials IAM, Karlsruhe Institute of Technology, 76131 Karlsruhe, Germany.
Van Petegem SMaterials Science and Simulation, NUM/ASQ, Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland.
Grolimund DBeamline MicroXAS, Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland.
Gumbsch PInstitute for Applied Materials IAM, Karlsruhe Institute of Technology, 76131 Karlsruhe, Germany and Fraunhofer-Institut für Werkstoffmechanik IWM, Wöhlerstrasse 11, 79108 Freiburg, Germany.
Van Swygenhoven HMaterials Science and Simulation, NUM/ASQ, Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland and Neutrons and X-rays for Mechanics of Materials, IMX, École Polytechnique Fédérale de Lausanne, CH-1012 Lausanne, Switzerland.
English
Low-temperature deformation of body-centered cubic metals shows a significant amount of plastic slip on planes with low shear stresses, a phenomenon called anomalous slip. Despite progress in atomistic modeling of the consequences of complex stress states on dislocation mobility, the phenomenon of anomalous slip remained elusive. Using in situ Laue microdiffraction and discrete dislocation dynamics in micrometer sized tungsten single crystals, we demonstrate the occurrence of significant anomalous slip. It occurs as a consequence of cross kinks, topological configurations generated by prior dislocation interactions. This clearly identifies anomalous slip as a multidislocation process and not a property of isolated dislocations. The cross-kink mechanism also explains the ambiguous reporting of anomalous slip traces in the past and directs us to ways of including anomalous slip in continuum crystal plasticity formulations.