Challenge toward breakage of RLS trade-off for EUV lithography by Photosensitized Chemically Amplified Resist (PSCAR) with flood exposure
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Nagahara, Seiji
Tokyo Electron Ltd. (Japan)
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Carcasi, Michael
Tokyo Electron America, Inc. (United States)
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Nakagawa, Hisashi
JSR Corp. (Japan)
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Buitrago, Elizabeth
Paul Scherrer Institute (Switzerland)
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Yildirim, Oktay
ASML Netherlands B.V. (Netherlands)
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Shiraishi, Gosuke
Tokyo Electron Kyushu Ltd. (Japan)
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Terashita, Yuichi
Tokyo Electron Kyushu Ltd. (Japan)
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Minekawa, Yukie
Tokyo Electron Kyushu Ltd. (Japan)
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Yoshihara, Kosuke
Tokyo Electron Kyushu Ltd. (Japan)
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Tomono, Masaru
Tokyo Electron Kyushu Ltd. (Japan)
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Mizoguchi, Hironori
Tokyo Electron Kyushu Ltd. (Japan)
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Estrella, Joel
Tokyo Electron America, Inc. (United States)
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Nagai, Tomoki
JSR Corp. (Japan)
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Naruoka, Takehiko
JSR Corp. (Japan)
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Dei, Satoshi
JSR Micro N.V. (Belgium)
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Hori, Masafumi
JSR Micro N.V. (Belgium)
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Oshima, Akihiro
Osaka Univ. (Japan)
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Vockenhuber, Michaela
Paul Scherrer Institute (Switzerland)
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Ekinci, Yasin
Paul Scherrer Institute (Switzerland)
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Meeuwissen, Marieke
ASML Netherlands B.V. (Netherlands)
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Verspaget, Coen
ASML Netherlands B.V. (Netherlands)
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Hoefnagels, Rik
ASML Netherlands B.V. (Netherlands)
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Rispens, Gijsbert
ASML Netherlands B.V. (Netherlands)
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Maas, Raymond
ASML Netherlands B.V. (Netherlands)
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Nakashima, Hideo
Tokyo Electron Ltd. (Japan)
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Tagawa, Seiichi
Osaka Univ. (Japan)
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Published in:
- Extreme Ultraviolet (EUV) Lithography VII. - SPIE. - 2016
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Language
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Open access status
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green
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Identifiers
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Persistent URL
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https://sonar.ch/global/documents/93187
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