High-Mobility In2O3:H Electrodes for Four-Terminal Perovskite/CuInSe2 Tandem Solar Cells.
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Jiang Y
Laboratory for Thin Films and Photovoltaics, Empa-Swiss Federal Laboratories for Materials Science and Technology, Ueberlandstrasse 129, 8600 Duebendorf, Switzerland.
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Feurer T
Laboratory for Thin Films and Photovoltaics, Empa-Swiss Federal Laboratories for Materials Science and Technology, Ueberlandstrasse 129, 8600 Duebendorf, Switzerland.
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Carron R
Laboratory for Thin Films and Photovoltaics, Empa-Swiss Federal Laboratories for Materials Science and Technology, Ueberlandstrasse 129, 8600 Duebendorf, Switzerland.
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Sevilla GT
Laboratory for Thin Films and Photovoltaics, Empa-Swiss Federal Laboratories for Materials Science and Technology, Ueberlandstrasse 129, 8600 Duebendorf, Switzerland.
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Moser T
Laboratory for Thin Films and Photovoltaics, Empa-Swiss Federal Laboratories for Materials Science and Technology, Ueberlandstrasse 129, 8600 Duebendorf, Switzerland.
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Pisoni S
Laboratory for Thin Films and Photovoltaics, Empa-Swiss Federal Laboratories for Materials Science and Technology, Ueberlandstrasse 129, 8600 Duebendorf, Switzerland.
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Erni R
Electron Microscopy Center, Empa-Swiss Federal Laboratories for Materials Science and Engineering, Ueberlandstrasse 129, 8600 Duebendorf, Switzerland.
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Rossell MD
Electron Microscopy Center, Empa-Swiss Federal Laboratories for Materials Science and Engineering, Ueberlandstrasse 129, 8600 Duebendorf, Switzerland.
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Ochoa M
Laboratory for Thin Films and Photovoltaics, Empa-Swiss Federal Laboratories for Materials Science and Technology, Ueberlandstrasse 129, 8600 Duebendorf, Switzerland.
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Hertwig R
Laboratory for Thin Films and Photovoltaics, Empa-Swiss Federal Laboratories for Materials Science and Technology, Ueberlandstrasse 129, 8600 Duebendorf, Switzerland.
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Tiwari AN
Laboratory for Thin Films and Photovoltaics, Empa-Swiss Federal Laboratories for Materials Science and Technology, Ueberlandstrasse 129, 8600 Duebendorf, Switzerland.
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Fu F
Laboratory for Thin Films and Photovoltaics, Empa-Swiss Federal Laboratories for Materials Science and Technology, Ueberlandstrasse 129, 8600 Duebendorf, Switzerland.
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English
Four-terminal (4-T) tandem solar cells (e.g., perovskite/CuInSe2 (CIS)) rely on three transparent conductive oxide electrodes with high mobility and low free carrier absorption in the near-infrared (NIR) region. In this work, a reproducible In2O3:H (IO:H) film deposition process is developed by independently controlling H2 and O2 gas flows during magnetron sputtering, yielding a high mobility value up to 129 cm2 V-1 s-1 in highly crystallized IO:H films annealed at 230 °C. Optimization of H2 and O2 partial pressures further decreases the crystallization temperature to 130 °C. By using a highly crystallized IO:H film as the front electrode in NIR-transparent perovskite solar cell (PSC), a 17.3% steady-state power conversion efficiency and an 82% average transmittance between 820 and 1300 nm are achieved. In combination with an 18.1% CIS solar cell, a 24.6% perovskite/CIS tandem device in 4-T configuration is demonstrated. Optical analysis suggests that an amorphous IO:H film (without postannealing) and a partially crystallized IO:H film (postannealed at 150 °C), when used as a rear electrode in a NIR-transparent PSC and a front electrode in a CIS solar cell, respectively, can outperform the widely used indium-doped zinc oxide (IZO) electrodes, leading to a 1.38 mA/cm2 short-circuit current (Jsc) gain in the bottom CIS cell of 4-T tandems.
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hybrid
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https://sonar.ch/global/documents/139396
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