Spin-Orbit Coupling at the Level of a Single Electron.
- Maisi VF Solid State Physics Laboratory, ETH Zurich, CH-8093 Zurich, Switzerland.
- Hofmann A Solid State Physics Laboratory, ETH Zurich, CH-8093 Zurich, Switzerland.
- Röösli M Solid State Physics Laboratory, ETH Zurich, CH-8093 Zurich, Switzerland.
- Basset J Solid State Physics Laboratory, ETH Zurich, CH-8093 Zurich, Switzerland.
- Reichl C Solid State Physics Laboratory, ETH Zurich, CH-8093 Zurich, Switzerland.
- Wegscheider W Solid State Physics Laboratory, ETH Zurich, CH-8093 Zurich, Switzerland.
- Ihn T Solid State Physics Laboratory, ETH Zurich, CH-8093 Zurich, Switzerland.
- Ensslin K Solid State Physics Laboratory, ETH Zurich, CH-8093 Zurich, Switzerland.
- 2016-04-16
Published in:
- Physical review letters. - 2016
English
We utilize electron counting techniques to distinguish a spin-conserving fast tunneling process and a slower process involving spin flips in AlGaAs/GaAs-based double quantum dots. By studying the dependence of the rates on the interdot tunnel coupling of the two dots, we find that as many as 4% of the tunneling events occur with a spin flip related to spin-orbit coupling in GaAs. Our measurement has a fidelity of 99% in terms of resolving whether a tunneling event occurred with a spin flip or not.
- Language
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- English
- Open access status
- green
- Identifiers
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- DOI 10.1103/PhysRevLett.116.136803
- PMID 27081997
- Persistent URL
- https://sonar.ch/global/documents/199516
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