Advantages of gated silicon single-photon detectors.
- Lunghi T Group of Applied Physics, University of Geneva, Geneva CH-1211, Switzerland. Tommaso.Lunghi@unige.ch
- Pomarico E
- Barreiro C
- Stucki D
- Sanguinetti B
- Zbinden H
- 2012-12-25
Published in:
- Applied optics. - 2012
English
We present a gated silicon single-photon detector based on a commercially available avalanche photodiode. Our detector achieves a photon-detection efficiency of 45±5% at 808 nm with 2·10(-6) dark count per nanosecond at 30 V of excess bias and -30°C. We compare gated and free-running detectors and show that this mode of operation has significant advantages in two representative experimental scenarios: detecting a single photon either hidden in faint continuous light or after a strong pulse. We also explore, at different temperatures and incident light intensities, the "charge persistence" effect, whereby a detector clicks some time after having been illuminated.
- Language
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- English
- Open access status
- green
- Identifiers
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- DOI 10.1364/AO.51.008455
- PMID 23262542
- Persistent URL
- https://sonar.ch/global/documents/21147
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