Journal article

Muon implantation experiments in films: Obtaining depth-resolved information.

  • Simões AFA CFisUC, Department of Physics, University of Coimbra, R. Larga, P-3004-516 Coimbra, Portugal.
  • Alberto HV CFisUC, Department of Physics, University of Coimbra, R. Larga, P-3004-516 Coimbra, Portugal.
  • Vilão RC CFisUC, Department of Physics, University of Coimbra, R. Larga, P-3004-516 Coimbra, Portugal.
  • Gil JM CFisUC, Department of Physics, University of Coimbra, R. Larga, P-3004-516 Coimbra, Portugal.
  • Cunha JMV International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal.
  • Curado MA CFisUC, Department of Physics, University of Coimbra, R. Larga, P-3004-516 Coimbra, Portugal.
  • Salomé PMP International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal.
  • Prokscha T Laboratory for Muon Spin Spectroscopy, Paul Scherrer Institute, CH-5232 Villigen PSI, Switzerland.
  • Suter A Laboratory for Muon Spin Spectroscopy, Paul Scherrer Institute, CH-5232 Villigen PSI, Switzerland.
  • Salman Z Laboratory for Muon Spin Spectroscopy, Paul Scherrer Institute, CH-5232 Villigen PSI, Switzerland.
Show more…
  • 2020-03-02
Published in:
  • The Review of scientific instruments. - 2020
English Implanted positive muons with low energies (in the range 1-30 keV) are extremely useful local probes in the study of thin films and multi-layer structures. The average muon stopping depth, typically in the order of tens of nanometers, is a function of the muon implantation energy and of the density of the material, but the stopping range extends over a broad region, which is also in the order of tens of nanometers. Therefore, an adequate simulation procedure is required in order to extract the depth dependence of the experimental parameters. Here, we present a method to extract depth-resolved information from the implantation energy dependence of the experimental parameters in a low-energy muon spin spectroscopy experiment. The method and corresponding results are exemplified for a semiconductor film, Cu(In,Ga)Se2, covered with a thin layer of Al2O3, but can be applied to any heterostructure studied with low-energy muons. It is shown that if an effect is present in the experimental data, this method is an important tool to identify its location and depth extent.
Language
  • English
Open access status
green
Identifiers
Persistent URL
https://sonar.ch/global/documents/23935
Statistics

Document views: 29 File downloads:
  • Full-text: 0