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Black-Si as a Photoelectrode.

  • Linklater DP School of Science, RMIT University, Melbourne, VIC 3000, Australia.
  • Haydous F Laboratory for Multiscale Materials Experiments, Paul Scherrer Institut, Villigen PSI, CH-5232 Villigen, Switzerland.
  • Xi C Laboratory for Multiscale Materials Experiments, Paul Scherrer Institut, Villigen PSI, CH-5232 Villigen, Switzerland.
  • Pergolesi D Laboratory for Multiscale Materials Experiments, Paul Scherrer Institut, Villigen PSI, CH-5232 Villigen, Switzerland.
  • Hu J Optical Sciences Centre and ARC Training Centre in Surface Engineering for Advanced Materials (SEAM), School of Science, Swinburne University of Technology, Hawthorn, VIC 3122, Australia.
  • Ivanova EP School of Science, RMIT University, Melbourne, VIC 3000, Australia.
  • Juodkazis S Optical Sciences Centre and ARC Training Centre in Surface Engineering for Advanced Materials (SEAM), School of Science, Swinburne University of Technology, Hawthorn, VIC 3122, Australia.
  • Lippert T Laboratory for Multiscale Materials Experiments, Paul Scherrer Institut, Villigen PSI, CH-5232 Villigen, Switzerland.
  • Juodkazytė J Center for Physical Sciences and Technology, Saulėtekio ave. 3, LT-10257 Vilnius, Lithuania.
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  • 2020-05-07
Published in:
  • Nanomaterials (Basel, Switzerland). - 2020
antireflection
black-Si
photoanode
water splitting
English The fabrication and characterization of photoanodes based on black-Si (b-Si) are presented using a photoelectrochemical cell in NaOH solution. B-Si was fabricated by maskless dry plasma etching and was conformally coated by tens-of-nm of TiO2 using atomic layer deposition (ALD) with a top layer of CoO x cocatalyst deposited by pulsed laser deposition (PLD). Low reflectivity R < 5 % of b-Si over the entire visible and near-IR ( λ < 2   μ m) spectral range was favorable for the better absorption of light, while an increased surface area facilitated larger current densities. The photoelectrochemical performance of the heterostructured b-Si photoanode is discussed in terms of the n-n junction between b-Si and TiO2.
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  • English
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gold
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https://sonar.ch/global/documents/278931
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